HD6413008VX25 Renesas Electronics America, HD6413008VX25 Datasheet - Page 519

MCU 5V 0K 100-TQFP

HD6413008VX25

Manufacturer Part Number
HD6413008VX25
Description
MCU 5V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8/300Hr
Datasheet

Specifications of HD6413008VX25

Core Processor
H8/300H
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
PWM, WDT
Number Of I /o
35
Program Memory Type
ROMless
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6413008VTE25
HD6413008VTE25
Item
Three-state
leakage
current
Input pull-up
MOS current
Input
capacitance
Current
dissipation*
Analog power
supply current
Reference
current
RAM standby voltage
2
Ports 4 to 6,
A
Ports 8 to B
RESO
Ports 4 and 5
NMI
All input pins
except NMI
Normal
operation
Sleep mode
Module
standby mode
Standby mode
During A/D
conversion
During A/D
and D/A
conversion
Idle
During A/D
conversion
During A/D
and D/A
conversion
Idle
0
to A
19
,
Symbol
|I
−I
C
I
AI
AI
V
CC
TSI
RAM
in
p
CC
CC
*
|
3
Min
50
2.0
Typ
32
(5.0 V)
37
(5.0 V)
24
(5.0 V)
29
(5.0 V)
19
(5.0 V)
21
(5.0 V)
1.0
0.6
0.6
0.01
0.45
2.0
0.01
Rev.4.00 Aug. 20, 2007 Page 473 of 638
Max
1.0
10.0
300
50
15
47
58
38
47
31
37
10
80
1.5
1.5
5.0
0.8
3.0
5.0
19. Electrical Characteristics
Unit
μA
μA
μA
pF
pF
mA
mA
mA
mA
mA
mA
μA
μA
mA
mA
μA
mA
mA
μA
V
REJ09B0395-0400
Test
Conditions
V
V
V
V
Vin = 0 V
f = fmin
Ta = 25°C
f = 20 MHz
f = 25 MHz
f = 20 MHz
f = 25 MHz
f = 20 MHz
f = 25 MHz
T
50°C < T
DASTE = 0
DASTE = 0
a
in
CC
in
in
≤ 50°C
= 0.5 V to
= 0 V
= 0 V
−0.5 V
a

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