DF36034HJV Renesas Electronics America, DF36034HJV Datasheet - Page 140
![MCU 3/5V 32K J-TEMP PB-FREE 64-Q](/photos/28/61/286103/64-bqfp__prqp0064gb-a_sml.jpg)
DF36034HJV
Manufacturer Part Number
DF36034HJV
Description
MCU 3/5V 32K J-TEMP PB-FREE 64-Q
Manufacturer
Renesas Electronics America
Series
H8® H8/300H Tinyr
Specifications of DF36034HJV
Core Processor
H8/300H
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, SCI, SSU
Peripherals
PWM, WDT
Number Of I /o
45
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-QFP
For Use With
R0K436079S000BE - KIT DEV FOR H8/36079 W/COMPILER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Section 7 ROM
The FLMCR1, FLMCR2, and EBR1 settings are retained, however program mode or erase mode
is aborted at the point at which the error occurred. Program mode or erase mode cannot be re-
entered by re-setting the P or E bit. However, PV and EV bit settings are retained, and a transition
can be made to verify mode. Error protection can be cleared only by a power-on reset.
7.6
In programmer mode, a PROM programmer can be used to perform programming/erasing via a
socket adapter, just as a discrete flash memory. Use a PROM programmer that supports the MCU
device type with the on-chip 64-kbyte flash memory (FZTAT64V5).
7.7
In user mode, the flash memory will operate in either of the following states:
Table 7.7 shows the correspondence between the operating modes of this LSI and the flash
memory. In subactive mode, the flash memory can be set to operate in power-down mode with the
PDWND bit in FLPWCR. When the flash memory returns to its normal operating state from
power-down mode or standby mode, a period to stabilize operation of the power supply circuits
that were stopped is needed. When the flash memory returns to its normal operating state, bits
STS2 to STS0 in SYSCR1 must be set to provide a wait time of at least 20 µs, even when the
external clock is being used.
Rev. 4.00 Mar. 15, 2006 Page 106 of 556
REJ09B0026-0400
Normal operating mode
The flash memory can be read and written to at high speed.
Power-down operating mode
The power supply circuit of flash memory can be partly halted. As a result, flash memory can
be read with low power consumption.
Standby mode
All flash memory circuits are halted.
Programmer Mode
Power-Down States for Flash Memory
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