HD64F3067RF20 Renesas Electronics America, HD64F3067RF20 Datasheet - Page 194

• Manufacturer Part Number: HD64F3067RF20
• Description: IC H8 MCU FLASH 128K 100-QFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Hr

Specifications of HD64F3067RF20

• Core Processor: H8/300H
• Core Size: 16-Bit
• Speed: 20MHz
• Connectivity: SCI, SmartCard
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 70
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 4K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 100-QFP
• Package: 100PQFP
• Family Name: H8
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 5 V
• Data Bus Width: 16|32 Bit
• Number Of Programmable I/os: 70
• Interface Type: SCI
• On-chip Adc: 8-chx10-bit
• On-chip Dac: 2-chx8-bit
• Number Of Timers: 7
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Section 6 Bus Controller
6.5.7
In the H8/3067 Group, provision is made for the DRAM RAS precharge time by always inserting
one RAS precharge state (T
by setting the TPC bit to 1 in DRCRB. The optimum number of T
to the DRAM connected and the operating frequency of the H8/3067 Group chip. Figure 6.19
shows the timing when two T
When the TCP bit is set to 1, two T
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REJ09B0276-0400
Read access
Write access
Note: n = 2 to 5
Precharge State Control
Figure 6.19 Timing with Two Precharge States (CSEL = 0 in DRCRB)
(UCAS /LCAS)
(UCAS /LCAS)
PB
PB
CSn (RAS)
4
4
D
RD(WE)
RD(WE)
D
A
/PB
/PB
15
23
15 to
to D
5
to A
5
AS
D
p
0
0
0
) when DRAM space is accessed. This can be changed to two T
p
states are inserted.
p
states are also used for CAS-before-RAS refresh cycles.
T
p1
T
p2
High level
High level
Row
Tr
p
cycles should be set according
Column
T
c1
T
c2
p
states