MC68HC908AB32CFU Freescale Semiconductor, MC68HC908AB32CFU Datasheet - Page 75

• Manufacturer Part Number: MC68HC908AB32CFU
• Description: IC MCU 8MHZ 32K FLASH 64-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908AB32CFU

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI, SPI
• Peripherals: POR, PWM
• Number Of I /o: 51
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

5.9.1 EEPROM Programming
MC68HC908AB32
Freescale Semiconductor
NOTE:
—
Rev. 1.1
The unprogrammed or erased state of an EEPROM bit is a logic 1.
Programming changes the state to a logic 0. Only EEPROM bytes in the
non-protected blocks and the EENVR register can be programmed.
Use the following procedure to program a byte of EEPROM:
A. EERAS1 and EERAS0 must be cleared for programming. Setting the
EELAT bit configures the address and data buses to latch data for
programming the array. Only data with a valid EEPROM address will be
latched. If EELAT is set, other writes to the EECR will be allowed after a
valid EEPROM write.
B. If more than one valid EEPROM writes occur, the last address and
data will be latched, overriding the previous address and data. Once
written data to the desired address, do not read EEPROM locations
other than the written location. (Reading an EEPROM location returns
the latched data, and causes the read address to be latched.)
C. The EEPGM bit cannot be set if the EELAT bit is cleared or a non-
valid EEPROM address is latched. This is to ensure proper
programming sequence. Once EEPGM is set, do not read any EEPROM
locations, otherwise the current program cycle will be unsuccessful.
When EEPGM is set, the on-board programming sequence will be
activated.
1. Clear EERAS1 and EERAS0, and set EELAT in the EECR.
2. Write the desired data to the desired EEPROM address.
3. Set the EEPGM bit.
4. Wait for a time, t
5. Clear EEPGM bit.
6. Wait for a time, t
7. Poll the EEPGM bit until it is cleared by the internal timer.
8. Clear EELAT bit.
Go to step 7 if AUTO is set.
Go to step 8.
EEPROM
EEPGM
EEFPV
(E)
(C)
, for the programming voltage to fall.
, to program the byte.
Technical Data
(B)
EEPROM
(D)
(A)
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