FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 142

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Schottky Diodes and Rectifiers (Continued)
MBR1535CT
MBR1545CT
MBR1550CT
MBR1560CT
MBR2035CT
MBR2045CT
MBR2050CT
MBR2060CT
MBR2535CT
MBR2545CT
MBR2550CT
MBR2560CT
MBR1035
MBR1045
MBR1050
MBR1060
MBR1635
MBR1645
MBR1650
MBR1660
MBR735
MBR745
MBR750
MBR760
TO-220AB
TO-220AC
Products
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Schottky Barrier Rectifier
Function
Configuration
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Dual & Common
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Cathode
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
I
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
(A)
FSM
2-137
(°C/W)
R
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
θJA
Discrete Power Products –
V
(V)
RRM
35
45
50
60
35
45
50
60
35
45
50
60
35
45
50
60
35
45
50
60
35
45
50
60
I
F (AV)
7.5
7.5
7.5
7.5
(A)
15
15
15
15
20
20
20
20
30
30
30
30
10
10
10
10
16
16
16
16
V
Diodes and Rectifiers
FM
0.84
0.84
0.75
0.75
0.84
0.84
0.95
0.95
0.82
0.82
0.75
0.75
0.84
0.84
0.63
0.63
0.75
0.75
0.84
0.84
0.75
0.75
(V)
0.8
0.8
Max
1000
1000
1000
1000
1000
1000
(µA) @V
100
100
100
100
150
150
200
200
100
100
200
100
500
100
100
200
100
500
I
RM
Max
35
45
50
60
35
45
50
60
35
45
50
60
35
50
35
50
35
50
45
60
45
60
45
60
R
(V)