FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 57

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
TO-263 (D
HUFA75345S3S
HUF75344S3S
HUFA75344S3S
HUFA75343S3S
HUFA75339S3S
HUF75337S3S
HUFA75337S3S
HUF75333S3S
HUF75332S3S
HUFA75332S3S
HUFA75329S3S
HUF75321S3S
HUFA75321S3S
FDB035AN06A0
FDB050AN06A0
HUF76445S3S
HUFA76445S3S
FDB070AN06A0
HUFA76443S3S
FDB5645
FQB85N06
FDB10AN06A0
FDB14AN06LA0
HUF76439S3S
HUFA76439S3S
FDB13AN06A0
HUF76437S3S
HUFA76437S3S
FQB65N06
HUFA75433S3ST
HUF76432S3S
HUFA76432S3S
FDB24AN06LA0
FDB20AN06A0
FQB55N06
FDB5680
FQB50N06L
FQB50N06
RF1S50N06SM
Products
2
Min. (V)
PAK) (Continued)
BV
55
55
55
55
55
55
55
55
55
55
55
55
55
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0035
0.0065
0.0065
0.0095
0.0105
0.0116
0.0135
0.007
0.008
0.008
0.009
0.012
0.014
0.014
0.016
0.019
0.019
0.024
0.034
0.034
0.005
0.007
0.008
0.012
0.012
0.014
0.014
0.016
0.016
0.017
0.017
0.019
0.021
0.022
0.022
10V
0.01
0.02
0.02
0.02
0.0066@6V
0.0146@5V
0.011@6V
0.011@6V
0.027@6V
0.034@6V
0.024@5V
0.023@6V
0.025@5V
R
0.0075
0.0075
0.0095
0.014
0.014
0.017
0.017
0.019
0.019
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-52
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
24.5
125
124
124
107
90
90
92
60
51
51
40
40
40
35
21
21
95
61
51
76
86
28
24
70
70
22
59
59
48
50
44
44
16
15
35
33
31
67
= 5V
I
D
75
75
75
75
75
75
75
66
60
60
49
35
35
80
80
75
75
15
75
80
85
75
60
75
75
62
71
71
65
64
59
59
36
45
55
40
52
50
50
(A)
MOSFETs
P
D
325
285
285
270
200
175
175
150
145
145
128
245
310
175
260
160
125
180
155
150
150
130
133
121
120
131
310
310
125
135
180
115
155
130
93
93
75
90
65
(W)