FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 147

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Bridge Rectifiers (Continued)
KBL08
KBL10
KBPM
2KBP005M
2KBP01M
2KBP02M
2KBP04M
2KBP06M
2KBP08M
2KBP10M
3N246
3N247
3N248
3N249
3N250
3N251
3N252
3N253
3N254
3N255
3N256
3N257
3N258
3N259
KBP005M
KBP01M
KBP02M
KBP04M
KBP06M
KBP08M
KBP10M
KBU
KBU4A
KBU4B
KBU4D
KBU4G
Products
V
RRM
1000
1000
1000
1000
1000
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
50
50
50
50
50
(V)
I
F(AV)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
4
4
2
2
2
2
2
2
2
2
2
2
2
2
2
2
4
4
4
4
2-142
(A)
Discrete Power Products –
V
FM
Max (V)
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1
1
1
1
Diodes and Rectifiers