FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 35

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-252 (DPAK) (Continued)
FDD6612A
FQD60N03L
HUF76121D3S
ISL9N327AD3ST
FDD6630A
HUF76107D3S
FDD6632
FDD6688S
FDD6676S
FDD6644S
FDD6670S
FDD6680S
FDD6690S
RFD16N05LSM
RFD14N05LSM
RFD14N05SM9A
HUF75329D3S
HUFA75329D3S
HUF75321D3S
HUFA75321D3S
HUF75309D3S
HUFA75309D3S
HUFA75307D3S
RFD16N06LESM
RFD4N06LSM
FDD10AN06A0
FDD14AN06LA0
FDD13AN06A0
FDD5670
FDD24AN06LA0
FDD20AN06A0
FDD5680
HUF76429D3S
HUFA76429D3S
HUFA75429D3ST
FDD5690
HUF76423D3S
HUFA76423D3S
FDD45AN06LA0
HUF76419D3S
Products
Min. (V)
BV
30
30
30
30
30
30
30
30
30
30
30
30
30
50
50
50
55
55
55
55
55
55
55
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
60
DSS
Config.
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0051
0.0085
0.0167
0.0105
0.0116
0.0135
0.023
0.023
0.027
0.035
0.006
0.009
0.011
0.026
0.026
0.036
0.036
0.015
0.019
0.021
0.023
0.023
0.025
0.027
0.032
0.032
0.036
0.037
10V
0.02
0.09
0.07
0.07
0.09
0.02
0.1
–
–
–
–
R
DS(ON)
0.0146@5V
0.027@6V
0.034@6V
0.018@6V
0.024@5V
0.025@6V
0.032@6V
0.045@5V
0.0063
0.0071
0.0125
0.0245
0.028
0.033
0.104
0.017
0.047
0.047
0.027
0.027
0.037
0.037
0.043
4.5V
0.03
0.04
0.05
0.01
0.1
0.6
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-30
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Replaced by FDD6630A
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.7
2.6
8.3
18
13
17
58
41
25
17
17
17
61
31
40
50
32
21
21
11
11
51
28
25
22
49
16
15
33
38
38
36
23
28
28
23
5
9
6
= 5V
I
D
30
30
20
20
21
88
78
66
64
55
40
16
14
14
20
20
20
20
19
19
15
16
50
50
50
48
36
45
38
20
20
20
30
20
20
22
20
9
4
(A)
MOSFETs
P
D
128
128
135
125
115
110
110
125
36
45
75
50
28
15
69
70
57
70
60
50
60
48
48
93
93
55
55
45
90
30
70
75
90
60
50
85
85
55
75
(W)