FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 42

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
TO-220
ISL9N302AP3
ISL9N303AP3
FDP8030L
FDP8870
FDP7045L
HUF76145P3
ISL9N304AP3
IFDP8874
FDP8896
FDP6676
ISL9N306AP3
FDP6670AL
FDP7030L
ISL9N307AP3
FDP7042L
HUF76139P3
ISL9N308AP3
FDP7030BL
ISL9N7030BLP3
ISL9N310AP3
FDP6035L
ISL9N312AP3
FDP6035AL
FDP6030L
HUF76129P3
FDP6030BL
HUF76121P3
HUF76107P3
FDP6676S
FDP6670S
FDP6644S
FDP6690S
HUF75229P3
BUZ11
HUF75345P3
HUFA75345P3
HUF75344P3
HUFA75344P3
TO-220 N-Channel
Products
Min. (V)
BV
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
50
50
55
55
55
55
DSS
Config.
SyncFET
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0025
0.0032
0.0035
0.0041
0.0045
0.0045
0.0045
0.0053
0.0059
0.0065
0.0075
0.0075
0.0112
0.0125
0.0065
0.0085
0.0155
0.006
0.006
0.007
0.007
0.008
0.009
0.009
0.012
0.013
0.016
0.018
0.021
0.052
0.022
0.007
0.007
0.008
0.008
10V
0.01
0.01
0.04
R
0.0033
0.0045
0.0046
0.0065
0.0075
0.0066
0.0075
0.0095
0.0085
0.0115
0.0105
4.5V
0.005
0.006
0.007
0.009
0.011
0.012
0.012
0.012
0.015
0.014
0.017
0.017
0.023
0.024
0.031
0.085
0.008
0.012
0.023
DS(ON)
0.01
0.02
–
–
–
–
–
–
Max (Ω) @ V
2-37
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
110
120
106
125
125
4.7
61
41
73
38
56
48
43
30
24
24
28
32
65
45
17
45
17
13
13
17
13
37
12
24
40
23
27
11
35
90
90
–
= 5V
I
D
156
100
114
75
75
80
75
75
92
84
75
80
80
75
50
75
75
60
75
62
48
58
48
48
56
40
47
20
76
62
55
42
44
30
75
75
75
75
(A)
MOSFETs
P
D
62.5
345
215
187
160
107
270
145
110
125
100
165
100
100
105
325
325
285
285
80
68
83
52
58
75
70
60
90
75
93
68
60
70
75
52
60
35
48
(W)