FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 61

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Products
2
Min. (V)
PAK) (Continued)
BV
250
250
250
250
300
300
300
300
300
400
400
400
400
400
400
400
400
400
400
450
500
500
500
500
500
500
500
500
500
500
500
500
500
500
600
600
600
600
600
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
1.75
0.29
0.48
0.53
0.54
1.75
0.38
0.43
0.48
0.73
0.85
0.65
0.73
1.1
2.2
0.7
0.9
2.2
3.7
0.8
1.6
3.4
3.4
1.1
0.8
1.3
1.4
1.5
1.8
2.6
2.7
5.3
5.5
0.7
0.8
2
1
1
1
R
4.5V
DS(ON)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-56
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
13.5
16.5
4.3
8.1
9.8
5.5
3.7
7.7
8.3
30
13
27
28
41
16
25
10
14
16
33
45
43
28
28
41
17
18
27
13
14
10
48
42
44
54
29
4
6
6
= 5V
I
D
11.4
12.5
10.5
4.1
3.6
2.8
2.8
9.1
5.4
3.2
2.1
5.5
4.5
3.3
2.5
6.2
5.5
4.5
4.5
2.5
3.4
2.1
1.5
9.5
7.4
11
10
15
13
12
7
7
6
2
9
9
8
5
9
(A)
MOSFETs
P
D
147
147
135
134
300
170
195
147
135
134
225
180
156
156
142
49
52
40
45
85
70
55
40
98
73
73
70
46
55
36
98
98
73
73
85
49
70
55
36
(W)