FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 21
FQI3N25TU
Manufacturer Part Number
FQI3N25TU
Description
MOSFET N-CH 250V 2.8A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI3N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.2 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.8A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.2nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.2 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.8 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQI3N25TU
Manufacturer:
FSC
Quantity:
1 000
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SO-8 (Continued)
FDS6990S
FDS7764A
RF1K49156
FDS7788
FDS7766
FDS7760A
FDS6688
FDS6676
FDS6682
FDS6672A
FDS6670A
FDS6644
FDS6680A
FDS6692
FDS6680
FDS6694
FDS6294
HUF76132SK8
FDS6690A
FDS4410
FDS6690
FDS6614A
FDS6678A
FDS4488
FDS6612A
FDS9412
NDS9410A
HUF76113SK8
RF1K49157
FDS6630A
HUF76105SK8
FDS7766S
FDS6688S
FDS6676S
FDS7764S
FDS6670S
FDS6680S
FDS6690S
FDS4672A
FDS4770
Products
Min. (V)
BV
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
40
40
DSS
Dual SyncFET
Config.
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
SyncFET
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.0055
0.0075
0.0085
0.0095
0.0113
0.0125
0.0135
0.0135
0.0055
0.0075
0.0075
0.0075
0.022
0.004
0.005
0.006
0.007
0.008
0.008
0.011
0.018
0.022
0.022
0.022
0.028
0.038
0.006
0.009
0.011
0.016
10V
0.01
0.01
0.02
0.03
0.05
–
–
R
DS(ON)
2-16
0.0075
0.0095
0.0105
0.0145
0.0135
0.0144
0.0065
0.0075
0.0125
0.005
0.006
0.008
0.007
0.008
0.009
0.013
0.015
0.017
0.025
0.024
0.036
0.042
0.041
0.053
0.078
0.009
0.009
0.017
0.025
0.013
4.5V
0.03
0.01
0.02
0.02
0.03
0.03
–
Max (Ω) @ V
2.5V
GS
Replaced by FDS6612A
Replaced by FDS6612A
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Replaced by FDS6680
=
Discrete Power Products –
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
GS
9.5
5.4
5.3
11
29
37
43
37
40
45
22
33
21
25
16
18
19
13
10
12
13
13
12
13
14
10
41
56
43
25
24
17
17
35
47
9
5
= 5V
I
D
14.5
12.5
12.5
11.5
14.5
13.5
13.5
11.5
13.2
7.5
9.3
7.5
7.9
8.4
7.9
7.3
6.5
6.5
5.5
15
18
17
15
16
14
13
13
12
12
13
11
10
10
17
16
10
11
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
3
(W)
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