FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 6

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete Power Products
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MOSFETs
BGA
SC70-6
SC75-6 FLMP
SuperSOT™-3/SOT-23
MicroFET™
SuperSOT™-6/TSOP-6 FLMP
SuperSOT™-6/TSOP-6
TSSOP-8
SuperSOT™-8
SO-8 FLMP
SO-8
TO-92
SOT-223
SO-14
TO-92L
TO-251 (IPAK)
TO-252 (DPAK)
DIP-8
TO-126
TO-220
TO-262 (I
TO-263 (D
TO-220F
TO-247
TO-3P
TO-3PF
TO-264
2-3
2-15
2
2-35
PAK)
2
2-20
2-23
PAK)
2-36
2-37
2-4
2-65
2-66
2-69
2-71
2-24
2-21
2-59
2-12
2-14
2-8
2-5
2-13
2-25
2-29
2-46
2-51
2-6
2-10
2-9
2-1
Discrete Power Products