FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 22

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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SO-8 (Continued)
FDS4470
FDS4780
FDS4480
SSD2009A
NDS9959
SSD2007A
HUFA76413DK8
HUF76407DK8T
HUFA76407DK8T
FDS9945
NDS9945
SSD2025
FDS5670
FDS5680
FDS5690
RF1K49154
HUFA76404DK8T
FDS3890
FDS3812
HUFA76504DK8T
FDS3572
FDS3570
FDS3580
HUF75531SK8
HUFA75531SK8
FDS3590
FDS3512
FDS3992
FDS3912
FDS3601
FDS3672
FDS3670
FDS3682
HUF75631SK8
HUFA75631SK8
FDS3680
FDS3690
FDS3692
FDS3612
Products
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
40
40
40
50
50
50
60
60
60
60
60
60
60
60
60
60
62
80
80
80
80
80
80
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.0105
0.009
0.012
0.049
0.014
0.028
0.044
0.074
0.016
0.019
0.027
0.037
0.062
0.125
0.022
0.035
0.039
0.039
0.043
10V
0.13
0.09
0.09
0.02
0.13
0.03
0.03
0.07
0.48
0.06
0.12
0.3
0.3
0.1
0.1
0.2
–
R
DS(ON)
0.056@5V
0.017@6V
0.025@6V
0.033@6V
0.084@6V
0.222@5V
0.029@6V
0.022@6V
0.031@6V
0.043@6V
0.108@6V
0.135@6V
0.028@6V
0.057@6V
0.048@6V
0.105@6V
2-17
0.11@5V
0.05@6V
0.08@6V
0.53@6V
0.13@6V
0.5@5V
0.105
4.5V
0.105
0.2
0.2
0.2
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2.5V
GS
Bold = New Products (introduced January 2003 or later)
Replaced by Si9945DY
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Replaced by FDS3682
–
–
–
–
Replaced by FDS3692
–
–
=
Discrete Power Products –
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
Typ. (nC)
11.5
GS
4.3
9.4
9.4
3.8
6.6
3.7
45
30
29
19
18
15
49
30
23
14
29
13
31
54
34
37
37
23
13
11
14
28
19
35
35
38
11
14
8
= 5V
I
D
12.5
10.8
10.8
4.8
3.8
3.8
3.5
3.3
3.2
4.7
3.4
2.3
8.9
7.6
6.5
4.5
1.3
7.5
5.5
5.5
5.2
4.5
3.4
10
3
2
2
8
7
2
9
6
6
4
3
6
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2
2
2
2
2
2
2
2
2
2
(W)