FQI3N25TU Fairchild Semiconductor, FQI3N25TU Datasheet - Page 196

• Manufacturer Part Number: FQI3N25TU
• Description: MOSFET N-CH 250V 2.8A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI3N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.2 Ohm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.2 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.fairchildsemi.com
Through-Hole
Note: Refer to individual product datasheet for specific product package dimensions
Discrete
PDF links for all the packaging information is at: http://www.fairchildsemi.com/products/discrete/packaging/pkg.html
TO-92
TO-92
TO-92
TO-92
Package Name
(Continued)
Prefixes Suffixes
(Continued)
MPSH
MPSH
MPSA
MPSL
MPSA
MPSL
MPF
MPS
MPF
MPS
BCX
BSS
NDF
BCX
BSS
NDF
KSC
KSP
KSA
KSD
KSB
2N
TIS
2N
TIS
BC
BF
BS
PF
PN
SS
BC
BF
BS
PF
PN
SS
SS
P
U
P
U
J
J
J61Z
MOSFET
X
X
Bipolar
X
X
X
X
Products
Diode
X
7-10
JFETs
X
X
X
IGBT
Pkg Method Qty (pcs)
Ammo Box
Bulk (BU)
Bulk
Bulk
Packagig Standard
1.5K-3.5K
1.5K
10K
2K
Packaging Information
Reel Dia
(inch)
n/a
n/a
n/a
n/a
Tape Width
(mm)
n/a
n/a
n/a
18