MT46H64M16LFCK-75:A TR Micron Technology Inc, MT46H64M16LFCK-75:A TR Datasheet - Page 72
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MT46H64M16LFCK-75:A TR
Manufacturer Part Number
MT46H64M16LFCK-75:A TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H64M16LFCK-75A_TR.pdf
(96 pages)
Specifications of MT46H64M16LFCK-75:A TR
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
105mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 35: Consecutive WRITE-to-WRITE
Figure 36: Nonconsecutive WRITE-to-WRITE
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
DM
DM
CK
CK
3
3
Notes:
Notes:
WRITE
WRITE
Bank,
Col b
Bank,
Col b
T0
T0
1, 2
t
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
1, 2
1. Each WRITE command can be to any bank.
2. An uninterrupted burst of 4 is shown.
3. D
t
DQSS (NOM)
DQSS (NOM)
IN
IN
b (n) = data-in for column b (n).
b (n) = data-in for column b (n).
NOP
NOP
D
D
T1
T1
b
b
IN
IN
T1n
T1n
b+1
b+1
D
D
IN
IN
WRITE
Bank,
Col n
b+2
b+2
D
NOP
D
T2
T2
IN
IN
1, 2
72
T2n
b+3
T2n
b+3
D
D
IN
IN
1Gb: x16, x32 Mobile LPDDR SDRAM
WRITE
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Bank,
NOP
Col n
D
T3
T3
n
IN
1,2
Don’t Care
Don’t Care
T3n
n+1
D
IN
n+2
NOP
D
D
T4
T4
NOP
n
IN
IN
T4n
T4n
n+1
n+3
D
D
IN
IN
Transitioning Data
Transitioning Data
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
n+2
D
T5
NOP
T5
NOP
IN
T5n
n+3
D
IN
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