MT46H64M16LFCK-75:A TR Micron Technology Inc, MT46H64M16LFCK-75:A TR Datasheet - Page 74

• Manufacturer Part Number: MT46H64M16LFCK-75:A TR
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46H64M16LFCK-75:A TR

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 14b
• Access Time (max): 6.5/6ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 105mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Compliant

Figure 38: WRITE-to-READ – Uninterrupting
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
Command
Address
t
t
t
DQSSnom
DQSSmin
DQSSmax
DQS
DQ
DQS
DQ
DQS
DQ
CK#
DM
DM
DM
CK
5
5
5
1
WRITE
Bank a,
Col b
T0
Notes:
t
t
2,3
t
DQSS
DQSS
DQSS
1. The READ and WRITE commands are to the same device. However, the READ and WRITE
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. An uninterrupted burst of 4 is shown.
4.
5. D
D
b
IN
commands may be to different devices, in which case
READ command could be applied earlier.
t
WTR is referenced from the first positive CK edge after the last data-in pair.
NOP
D
IN
T1
b
IN
b = data-in for column b; D
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+2
b+1
D
D
IN
IN
b+2
NOP
D
T2
IN
b+3
b+2
D
D
IN
IN
b+3
D
T2n
IN
74
b+3
D
IN
NOP
T3
OUT
t
WTR
n = data-out for column n.
1Gb: x16, x32 Mobile LPDDR SDRAM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
4
Bank a,
READ
Col n
T4
Don’t Care
t
WTR is not required and the
CL = 2
CL = 2
CL = 2
T5
NOP
© 2007 Micron Technology, Inc. All rights reserved.
WRITE Operation
T5n
Transitioning Data
D
D
D
OUT
OUT
OUT
n
n
n
T6
NOP
D
D
D
n + 1
n + 1
n + 1
OUT
OUT
OUT
T6n