MT46H64M16LFCK-75:A TR Micron Technology Inc, MT46H64M16LFCK-75:A TR Datasheet - Page 84
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT46H64M16LFCK-75:A TR
Manufacturer Part Number
MT46H64M16LFCK-75:A TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46H64M16LFCK-75A_TR.pdf
(96 pages)
Specifications of MT46H64M16LFCK-75:A TR
Organization
64Mx16
Density
1Gb
Address Bus
14b
Access Time (max)
6.5/6ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
1.8V
Package Type
VFBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
1.95V
Operating Supply Voltage (min)
1.7V
Supply Current
105mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
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Figure 46: Bank Write – With Auto Precharge
Command
PDF: 09005aef82ce3074
1gb_ddr_mobile_sdram_t48m.pdf - Rev. L 04/10 EN
BA0, BA1
Address
DQS
DQ
CK#
CKE
A10
DM
CK
1
t
t
IS
IS
NOP
T0
t
4
t
IH
IH
Notes:
t
t
IS
ACTIVE
IS
Bank x
Row
Row
T1
t
IH
t
IH
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 in the case shown.
3. Enable auto precharge.
4. D
t
CK
these times.
t
IN
t
RCD
RAS
n = data-out from column n.
NOP
T2
4
t
CH
t
CL
t
t
WRITE
WPRES
Bank x
IS
Col n
T3
Note 3
t
t
IH
DQSS (NOM)
2
84
t
DS
NOP
T4
D
b
IN
t
WPRE
4
t
1Gb: x16, x32 Mobile LPDDR SDRAM
DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T4n
t
DQSL
NOP
T5
t
4
DQSH
T5n
t
WPST
NOP
T6
4
Don’t Care
© 2007 Micron Technology, Inc. All rights reserved.
Auto Precharge
t
WR
NOP
T7
4
Transitioning Data
NOP
T8
4
t
RP
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