MT47H32M16BN-37E:D Micron Technology Inc, MT47H32M16BN-37E:D Datasheet - Page 65
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MT47H32M16BN-37E:D
Manufacturer Part Number
MT47H32M16BN-37E:D
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16BN-37ED.pdf
(139 pages)
Specifications of MT47H32M16BN-37E:D
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
205mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M16BN-37E:D
Manufacturer:
MICRON
Quantity:
489
Company:
Part Number:
MT47H32M16BN-37E:D
Manufacturer:
MICRON
Quantity:
319
Company:
Part Number:
MT47H32M16BN-37E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 29: Tangent Line for
Table 30: DDR2-400/533
All units are shown in picoseconds
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
(V/ns)
Slew
Rate
DQ
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
t
125
83
4.0 V/ns
DS
Δ
0
–
–
–
–
–
–
t
DH
45
21
Δ
0
–
–
–
–
–
–
t
125
–11
Notes:
83
3.0 V/ns
DS
Δ
0
–
–
–
–
–
t
–14
Hold slew rate
rising signal
DH
45
21
Δ
Vil(dc) MAX
t
0
–
–
–
–
–
Vih(dc) MIN
Vil(ac) MAX
Vih(ac) MIN
DS,
1. For all input signals, the total
Vref(dc)
t
VddQ
sheet value to the derating value listed in Table 30 (page 65).
t
125
–11
–25
IH
t
83
2.0 V/ns
DS
CK#
Δ
DH Derating Values with Differential Strobe
0
–
–
–
–
Vss
CK
=
t
–14
–31
DC to Vref
Tangent line (Vref[dc] - Vil[dc] MAX)
DH
45
21
Δ
0
–
–
–
–
region
DQS, DQS# Differential Slew Rate
t
–13
–31
DS
95
12
1.8 V/ns
Δ
1
–
–
–
–
ΔTR
t
–19
–42
t IS
DH
33
12
–2
Tangent
Δ
–
–
–
–
line
t
65
–19
–43
DS
24
13
–1
1.6 V/ns
Δ
–
–
–
–
t IH
t
DS and
ΔTR
t
–30
–59
DH
24
10
–7
Hold slew rate
falling signal
Δ
–
–
–
–
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Nominal
t
t
–31
–74
DH required is calculated by adding the data
DS
25
11
–7
1.4 V/ns
line
Δ
–
–
–
–
512Mb: x4, x8, x16 DDR2 SDRAM
=
t
–18
–47
–89
Tangent line (Vih[dc] MIN - Vref[dc])
t IS
DH
22
Δ
–
–
–
5
–
Tangent
DC to Vref
line
region
–127 –140 –115 –128 –103 –116
Input Slew Rate Derating
t
–19
–62
t IH
DS
23
1.2 V/ns
Δ
5
–
–
–
–
ΔTF
ΔTF
Nominal
t
–35
–77
DH
17
–6
Δ
–
–
–
–
line
© 2004 Micron Technology, Inc. All rights reserved.
t
–50
17
1.0 V/ns
DS
–7
Δ
–
–
–
–
–
t
–23
–65
DH
Δ
–
–
–
–
–
6
t
–38
DS
0.8 V/ns
Δ
5
–
–
–
–
–
–
t
–11
–53
DH
Δ
–
–
–
–
–
–