MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 21
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
ROHM
Quantity:
1 001
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
MICRON
Quantity:
2 690
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Asynchronous Data Input
Figure 13: Asynchronous Data Input Cycles
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
WE#
I/Ox
CE#
ALE
CLE
Data is written to the cache register of the selected die (LUN) on the rising edge of WE#
when CE# is LOW, ALE is LOW, CLE is LOW, and RE# is HIGH.
Data input is ignored by die (LUNs) that are not selected or are busy (RDY = 0). Data is
written to the data register on the rising edge of WE# when CE#, CLE, and ALE are LOW,
and the device is not busy.
Data is input on I/O[7:0] on x8 devices and on I/O[15:0] on x16 devices.
t
ALS
t
WP
t
DS
D
IN
t
WC
M
t
DH
t
WH
t
WP
t
D
DS
IN
21
M+1
t
DH
Asynchronous Interface Bus Operation
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
t
WP
t
DS
D
IN
N
t
t
t
CLH
DH
CH
© 2010 Micron Technology, Inc. All rights reserved.
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