MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 24
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
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Quantity
Price
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Figure 16: READ/BUSY# Open Drain
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
driver enables multiple R/B# outputs to be OR-tied. Typically, R/B# is connected to an
interrupt pin on the system controller.
The combination of Rp and capacitive loading of the R/B# circuit determines the rise
time of the R/B# signal. The actual value used for Rp depends on the system timing re-
quirements. Large values of Rp cause R/B# to be delayed significantly. Between the 10%
and 90% points on the R/B# waveform, the rise time is approximately two time con-
stants (TC).
Where R = Rp (resistance of pull-up resistor), and C = total capacitive load.
The fall time of the R/B# signal is determined mainly by the output impedance of the
R/B# signal and the total load capacitance. Approximate Rp values using a circuit load
of 100pF are provided in Figure 21 (page 27).
The minimum value for Rp is determined by the output drive capability of the R/B#
signal, the output voltage swing, and V
Where Σ
V
V
CC
SS
IL
is the sum of the input currents of all devices tied to the R/B# pin.
I
Rp =
OL
V
Device
CC
(MAX) - V
I
OL
TC = R × C
24
R/B#
Open drain output
+ Σ
OL
IL
Asynchronous Interface Bus Operation
Rp
(MAX)
CC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
.
1Gb x8, x16: NAND Flash Memory
© 2010 Micron Technology, Inc. All rights reserved.