MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 42

• Manufacturer Part Number: MT29F1G08ABADAH4:D
• Description: MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
• Manufacturer: Micron Technology Inc

Specifications of MT29F1G08ABADAH4:D

• Cell Type: NAND
• Density: 8Gb
• Interface Type: Parallel
• Address Bus: 27b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Package Type: VFBGA
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 35mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Supplier Unconfirmed

GET FEATURES (EEh)
Figure 29: GET FEATURES (EEh) Operation
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
The GET FEATURES (EEh) command reads the subfeature parameters (P1–P4) from the
specified feature address. This command is accepted by the target only when all die
(LUNs) on the target are idle.
Writing EEh to the command register puts the target in get features mode. The target
stays in this mode until another valid command is issued.
When the EEh command is followed by a feature address, the target goes busy for
t
tion, the READ MODE (00h) command must be used to re-enable data output mode.
After
eters.
Cycle type
FEAT. If the READ STATUS (70h) command is used to monitor for command comple-
R/B#
I/Ox
t
FEAT completes, the host enables data output mode to read the subfeature param-
Command
EEh
Address
FA
t WB
42
t FEAT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
t RR
D
P1
OUT
D
P2
OUT
Feature Operations
© 2010 Micron Technology, Inc. All rights reserved.
D
P3
OUT
D
P4
OUT