MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 59
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
ROHM
Quantity:
1 001
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
MICRON
Quantity:
2 690
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Erase Operations
ERASE BLOCK (60h-D0h)
Figure 42: ERASE BLOCK (60h-D0h) Operation
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Erase operations are used to clear the contents of a block in the NAND Flash array to
prepare its pages for program operations.
Erase Operations
The ERASE BLOCK (60h-D0h) command erases one block in the NAND Flash array.
When the die (LUN) is ready (RDY = 1, ARDY = 1), the host should check the FAIL bit to
verify that this operation completed successfully.
The ERASE BLOCK (60h-D0h) command erases the specified block in the NAND Flash
array. This command is accepted by the die (LUN) when it is ready (RDY = 1, ARDY = 1).
To erase a block, write 60h to the command register. Then write two address cycles con-
taining the row address; the page address is ignored. Conclude by writing D0h to the
command register. The selected die (LUN) will go busy (RDY = 0, ARDY = 0) for
while the block is erased.
To determine the progress of an ERASE operation, the host can monitor the target's R/
B# signal, or alternatively, the status operation (70h) can be used. When the die (LUN) is
ready (RDY = 1, ARDY = 1) the host should check the status of the FAIL bit.
Cycle type
I/O[7:0]
RDY
Command
60h
Address
R1
Address
59
R2
Command
D0h
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t WB
1Gb x8, x16: NAND Flash Memory
t BERS
© 2010 Micron Technology, Inc. All rights reserved.
Erase Operations
t
BERS