MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 8
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
ROHM
Quantity:
1 001
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
MICRON
Quantity:
2 690
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
General Description
Signal Descriptions and Assignments
Table 1: Asynchronous Signal Definitions
Signal Assignments
Figure 2: 48-Pin TSOP – Type 1, CPL (Top View)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
I/O[15:0] (x16)
I/O[7:0] (x8)
Signal
WE#
WP#
DNU
R/B#
ALE
CE#
CLE
RE#
V
V
NC
CC
SS
1
Output
Supply
Supply
Type
Input
Input
Input
Input
Input
Input
Notes:
I/O
–
–
Micron NAND Flash devices include an asynchronous data interface for high-perform-
ance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer
commands, address, and data. There are five control signals used to implement the asyn-
chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control
hardware write protection and monitor device status (R/B#).
This hardware interface creates a low pin-count device with a standard pinout that re-
mains the same from one density to another, enabling future upgrades to higher densi-
ties with no board redesign.
A target is the unit of memory accessed by a chip enable signal. A target contains one or
more NAND Flash die. A NAND Flash die is the minimum unit that can independently
execute commands and report status. A NAND Flash die, in the ONFI specification, is
referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable
signal. For further details, see Device and Array Organization.
1. See Device and Array Organization for detailed signal connections.
2. See Asynchronous Interface Bus Operation for detailed asynchronous interface signal de-
Description
Address latch enable: Loads an address from I/O[7:0] into the address register.
Chip enable: Enables or disables one or more die (LUNs) in a target.
Command latch enable: Loads a command from I/O[7:0] into the command register.
Read enable: Transfers serial data from the NAND Flash to the host system.
Write enable: Transfers commands, addresses, and serial data from the host system to the
NAND Flash.
Write protect: Enables or disables array PROGRAM and ERASE operations.
Data inputs/outputs: The bidirectional I/Os transfer address, data, and command informa-
tion.
Ready/busy: An open-drain, active-low output that requires an external pull-up resistor.
This signal indicates target array activity.
V
V
No connect: NCs are not internally connected. They can be driven or left unconnected.
Do not use: DNUs must be left unconnected.
CC
SS
scriptions.
: Core ground connection
: Core power supply
2
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1Gb x8, x16: NAND Flash Memory
General Description
© 2010 Micron Technology, Inc. All rights reserved.