MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 61
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MT29F1G08ABADAH4:D
Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet
1.MT29F1G08ABADAH4D.pdf
(93 pages)
Specifications of MT29F1G08ABADAH4:D
Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
ROHM
Quantity:
1 001
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
MICRON
Quantity:
2 690
Company:
Part Number:
MT29F1G08ABADAH4:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 43: READ FOR INTERNAL DATA MOVE (00h-35h) Operation
Figure 44: READ FOR INTERNAL DATA MOVE (00h–35h) with RANDOM DATA READ (05h–E0h)
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Cycle type
Cycle type
Cycle type
I/O[7:0]
I/O[7:0]
I/O[7:0]
RDY
RDY
RDY
1
Command
Command
00h
05h
Command
00h
Address
Address
C1
C1
Address
C1
Address
Address
C2
C2
Address
Address
C2
Address
Command
R1
E0h
Address
R1
Address
t
WHR
61
R2
Address Command
R2
Command
35h
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
Dk
OUT
1Gb x8, x16: NAND Flash Memory
35h
t
WB
Internal Data Move Operations
t WB
Dk + 1
D
OUT
t
R
t R
Dk + 2
D
t
OUT
RR
t RR
D
D0
© 2010 Micron Technology, Inc. All rights reserved.
OUT
D
OUT
Dn
D
…
OUT
Dn + 1
D
OUT
Dj + n
D
OUT
Dn + 2
D
OUT
1