MT29F1G08ABADAH4:D Micron Technology Inc, MT29F1G08ABADAH4:D Datasheet - Page 62

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MT29F1G08ABADAH4:D

Manufacturer Part Number
MT29F1G08ABADAH4:D
Description
MICMT29F1G08ABADAH4:D 1GB SLC NAND BGA
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F1G08ABADAH4:D

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
128M
Supply Current
35mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed

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MT29F1G08ABADAH4:D
0
Figure 45: INTERNAL DATA MOVE (85h-10h) with Internal ECC Enabled
Figure 46: INTERNAL DATA MOVE (85h-10h) with RANDOM DATA INPUT with Internal ECC Enabled
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
I/O[7:0]
I/O[7:0]
R/B#
R/B#
00h
00h
Source address
Source address
(4 cycles)
Address
(4 cycles)
Address
35h
35h
t
R_ECC
t
R_ECC
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
70h
Status
Status
00h
00h
D
D
OUT
OUT
62
D
is optional
D
OUT
OUT
is optional
85h
Destination address
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(4 cycles)
85h
Address
1Gb x8, x16: NAND Flash Memory
Destination address
(4 cycles)
Address
Internal Data Move Operations
Data
(Unlimitted repetitions are possible)
85h
Column address 1, 2
10h
(2 cycles)
Address
t
PROG_ECC
Data
© 2010 Micron Technology, Inc. All rights reserved.
SR bit 0 = 0 READ successful
SR bit 1 = 0 READ error
70h
10h
t
PROG_ECC
Status
00h
70h

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