MC9S08GT16CFB Freescale Semiconductor, MC9S08GT16CFB Datasheet - Page 279
MC9S08GT16CFB
Manufacturer Part Number
MC9S08GT16CFB
Description
Manufacturer
Freescale Semiconductor
Datasheet
1.MC9S08GT16CFB.pdf
(290 pages)
Specifications of MC9S08GT16CFB
Cpu Family
HCS08
Device Core Size
8b
Frequency (max)
20MHz
Interface Type
SCI/SPI
Program Memory Type
Flash
Program Memory Size
16KB
Total Internal Ram Size
1KB
# I/os (max)
36
Number Of Timers - General Purpose
4
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.08V
On-chip Adc
8-chx10-bit
Instruction Set Architecture
CISC
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Package Type
PQFP
Lead Free Status / Rohs Status
Not Compliant
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A.10
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional
information on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin
EB619/D, Typical Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature
and de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor
defines typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for
Nonvolatile Memory.
0 < f
0 < f
T
T = 25°C
L
FLASH Specifications
to T
Bus
Bus
H
< 8 MHz
< 20 MHz
= –40°C to + 85°C
Characteristic
4
2
(2)
1
3
(2)
Table A-13. FLASH Characteristics
MC9S08GB/GT Data Sheet, Rev. 2.3
(2)
V
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Mass
D_ret
Page
Fcyc
prog
Read
10,000
2.08
Min
150
2.1
1.8
15
5
Chapter 4,
100,000
Typical
20,000
4000
100
9
4
“Memory.”
Max
6.67
200
3.6
3.6
3.6
—
—
—
FLASH Specifications
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
µs
V
V
DD
supply.
279
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