SAM7X128 Atmel Corporation, SAM7X128 Datasheet - Page 133

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SAM7X128

Manufacturer Part Number
SAM7X128
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of SAM7X128

Flash (kbytes)
128 Kbytes
Pin Count
100
Max. Operating Frequency
55 MHz
Cpu
ARM7TDMI
Hardware Qtouch Acquisition
No
Max I/o Pins
62
Ext Interrupts
62
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
2
Twi (i2c)
1
Uart
3
Can
1
Ssc
1
Ethernet
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
8
Adc Resolution (bits)
10
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
32
Self Program Memory
NO
Dram Memory
No
Nand Interface
No
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
3.3
Operating Voltage (vcc)
3.0 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
No
20.3.4.6
20.3.4.7
20.3.4.8
6120I–ATARM–06-Apr-11
Flash Security Bit Command
AT91SAM7X512 Select EFC Command
Memory Write Command
Security bits can be set using Set Security Bit command (SSE). Once the security bit is active,
the Fast Flash programming is disabled. No other command can be run. Only an event on the
Erase pin can erase the security bit once the contents of the Flash have been erased.
The AT91SAM7X512 security bit is controlled by the EFC0. To use the Set Security Bit com-
mand, the EFC0 must be selected using the Select EFC command.
Table 20-27. Set Security Bit Command
Once the security bit is set, it is not possible to access FFPI. The only way to erase the security
bit is to erase the Flash.
In order to erase the Flash, the user must perform the following:
Then it is possible to return to FFPI mode and check that Flash is erased.
The commands WPx, EA, xLB, xFB are executed using the current EFC controller. The default
EFC controller is EFC0. The Select EFC command (SEFC) allows selection of the current EFC
controller.
Table 20-28. Select EFC Command
This command is used to perform a write access to any memory location.
The Memory Write command (WRAM) is optimized for consecutive writes. An internal address
buffer is automatically increased.
Table 20-29. Write Command
Read/Write
Write
Step
1
2
Read/Write
Write
Write
Write
Write
Write
Write
• Power-off the chip
• Power-on the chip with TST = 0
• Assert Erase during a period of more than 220 ms
• Power-off the chip
Handshake Sequence
Write handshaking
Write handshaking
DR Data
SSE
DR Data
(Number of Words to Write) << 16 | (WRAM)
Address
Memory [address]
Memory [address+4]
Memory [address+8]
Memory [address+(Number of Words to Write - 1)* 4]
MODE[3:0]
CMDE
DATA
SAM7X512/256/128
DATA[15:0]
SEFC
0 = Select EFC0
1 = Select EFC1
133

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