MT55L128L18P1 Micron Semiconductor Products, Inc., MT55L128L18P1 Datasheet - Page 15

• Manufacturer Part Number: MT55L128L18P1
• Description: 2Mb ZBT SRAM, 3.3V Vdd, 3.3V I/O, Pipelined,
• Manufacturer: Micron Semiconductor Products, Inc.

NOT RECOMENDED FOR NEW DESIGNS
READ/WRITE TIMING PARAMETERS
NOTE: 1. For this waveform, ZZ is tied LOW.
2Mb: 128K x 18, 64K x 32/36 3.3V I/O, Pipelined ZBT SRAM
MT55L128L18P1_C.p65 – Rev. C, Pub. 11/02
COMMAND
SYMBOL
t
f
t
t
t
t
t
t
t
t
KHKH
KF
KHKL
KLKH
KHQV
KHQX
KHQX1
KHQZ
GLQV
GLQX
ADDRESS
ADV/LD#
BWx#
R/W#
CKE#
2. Burst sequence order is determined by MODE (0 = linear, 1 = interleaved). BURST operations are optional.
3. CE# represents three signals. When CE# = 0, it represents CE# = 0, CE2# = 0, CE2 = 1.
4. Data coherency is provided for all possible operations. If a READ is initiated, the most current data is used. The most
OE#
CLK
CE#
DQ
recent data may be from the input data register.
t
t
t
EVKH
AVKH
CVKH
WRITE
D(A1)
A1
1
t
t
KHEX
t
KHAX
KHCX
MIN
7.5
2.2
2.2
1.5
1.5
1.5
0
-7.5
WRITE
D(A2)
2
MAX
A2
t
133
KHKL
4.2
3.5
4.2
t KHKH
t
DVKH
t
KLKH
D(A2+1)
MIN
BURST
WRITE
3.5
3.5
1.5
1.5
1.5
D(A1)
10
0
3
-10
t
KHDX
MAX
100
5.0
3.5
5.0
READ/WRITE TIMING
D(A2)
READ
Q(A3)
A3
4
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
D(A2+1)
15
Q(A4)
READ
A4
5
t
t
KHQV
KHQX1
SYMBOL
t
t
t
t
t
t
t
t
t
GHQZ
AVKH
EVKH
CVKH
DVKH
KHAX
KHEX
KHCX
KHDX
3.3V I/O, PIPELINED ZBT SRAM
Q(A4+1)
BURST
READ
2Mb: 128K x 18, 64K x 32/36
Q(A3)
6
t
KHQX
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
GHQZ
WRITE
D(A5)
Q(A4)
A5
7
MIN
t
DON’T CARE
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
GLQV
t
GLQX
-7.5
Q(A4+1)
READ
Q(A6)
A6
8
MAX
t
4.2
t
KHQX
KHQZ
MIN
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
WRITE
D(A7)
D(A5)
9
A7
©2002, Micron Technology, Inc.
-10
UNDEFINED
MAX
5.0
DESELECT
10
Q(A6)
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns