MT16VDDT3264 Micron, MT16VDDT3264 Datasheet
MT16VDDT3264
Related parts for MT16VDDT3264
MT16VDDT3264 Summary of contents
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... NOTE: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT16VDDT6464AG-265A1 32, 64 Meg x 64 DDR SDRAM DIMMs DD16C32_64X64AG_C.p65 – Rev. C; Pub. 3/02 184-PIN DDR SDRAM DIMMs MT16VDDT3264A - 256MB MT16VDDT6464A - 512MB For the latest data sheet, please refer to the Micron Web site: OPTIONS • ...
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... V SS NC/A12* 138 CK0# 161 DQ46 PIN 92 PIN 53 U12 U11 U10 PIN 93 pin SS Micron Technology, Inc., reserves the right to change products or specifications without notice. PIN SYMBOL 162 DQ47 163 NC 164 V DDQ 165 DQ52 166 DQ53 167 N C 168 V DD ...
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... Serial Presence-Detect Data: SDA is a bidirectional pin Output used to transfer addresses and data into and out of the presence-detect portion of the module. 3 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMMs DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. DD ©2002, Micron Technology, Inc. ...
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... Do Not Use: These pins are not connected on this module but are assigned pins on other modules in this product family. 4 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMMs DESCRIPTION Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2002, Micron Technology, Inc. ...
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... WP NOTE: 1. All resistor values are 22 ohms unless otherwise specified. 2. Per industry standard, Micron utilizes various component speed grades as referenced in the Module Part Numbering Guide at www.micron.com/numberguide optimize system and loading and signal integrity for -335 speed grade modules, 3Ω (single bank modules) or 5Ω ...
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... GENERAL DESCRIPTION The MT16VDDT3264A and MT16VDDT6464A are high-speed CMOS, dynamic random-access, 256MB and 512MB unbuffered memory modules organized in a x64 configuration. These modules use internally con- figured quad-bank DDR SDRAM devices. These DDR SDRAM modules use a double data rate architecture to achieve high-speed operation. The ...
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... For a burst length of eight, A3-Ai select the eight- data-element block; A0-A2 select the first access within the block. 4. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. Micron Technology, Inc., reserves the right to change products or specifications without notice. Type = Interleaved 0-1 1-0 0-1-2-3 1-0-3-2 ...
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... NOP NOP unknown operation or incompatibility with future ver- sions may result. DON’T CARE 8 Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMMs CAS Latency (CL) Table ALLOWABLE OPERATING CLOCK FREQUENCY (MHz) ...
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... NOTE: 1. E13 and E12 (256MB module), or E14 and E13 (512MB Module) (BA1 and BA0) must be “0, 1” to select the Extended Mode Register (vs. the base Mode Register). 2. The QFC# option is not supported. 9 Micron Technology, Inc., reserves the right to change products or specifications without notice Address Bus 7 ...
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... Micron Technology, Inc., reserves the right to change products or specifications without notice. ADDR NOTES Bank/Row 3 H Bank/Col 4 L Bank/Col Code Op-Code ...
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... OH I 16.8 – OL MIN MAX V + 0.310 – REF – 0.310 REF 0.49 × V 0.51 × Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES µA 48 µ 33 ...
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... I b TBD TBD TBD 2,624 2,104 2P, power-down mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES 21, 28 21 ...
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... TBD TBD TBD TBD TBD TBD TBD TBD 2P, power-down mode. DD Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS NOTES 21, 28 21 ...
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... RPRE 0.9 1.1 t RPST 0.4 0.6 t RRD 12 t WPRE 0.25 t WPRES 0 t WPST 0.4 0 WTR 1 14 Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (x64) -26A/-265 -202 MAX MIN MAX UNITS +0.75 -0.8 +0 0.45 0.55 0.45 0. 0.45 0.55 0.45 0. ...
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... DQSQ t REFC 140.6 t REFC 70.3 t REFI 15.6 t REFI 7.8 t VTD 0 t XSNR 75 t XSRD 200 15 Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (x64) -26A/-265 -202 MAX MIN MAX UNITS DQSQ QH - DQSQ ns 140.6 140.6 µs 70.3 70.3 µs 15.6 15.6 µ ...
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... CK that meets the minimum absolute value for the respective parameter. (MAX) for I measurements is the largest DD t multiple of CK that meets the maximum t absolute value for RAS. Micron Technology, Inc., reserves the right to change products or specifications without notice. = +2.5V ±0.2V and has an . ...
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... DC level 3.450 3.400 3.350 3.300 3.100 3.050 3.000 2.950 2.275 2.238 2.200 2.163 47/53 46.5/54.5 46/54 45.5/55.5 Micron Technology, Inc., reserves the right to change products or specifications without notice and DH for 3.250 2.900 2.125 45/55 ©2002, Micron Technology, Inc. ...
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... Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMMs minimum pull-up and pull-down current should be between .71 and 1.4, for device drain- to-source voltages from 0.1V to 1.0 Volt, and at the same voltage and temperature. ...
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... Meg x 64 DDR SDRAM DIMMs DD16C32_64X64AG_C.p65 – Rev. C; Pub. 3/02 184-PIN DDR SDRAM DIMMs Micron Technology, Inc., reserves the right to change products or specifications without notice. 256MB, 512MB (x64) ©2002, Micron Technology, Inc. ...
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... SCL SDA DATA STABLE Figure 3 20 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMMs Figure 2 Definition of Start and Stop START BIT 8 9 Acknowledge Micron Technology, Inc., reserves the right to change products or specifications without notice. STOP BIT ©2002, Micron Technology, Inc. ...
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... CHIP ENABLE SU:DAT t SU:STO MIN 4 4.7 250 4.7 4.7 Micron Technology, Inc., reserves the right to change products or specifications without notice BUF UNDEFINED MAX UNITS µs µs 1 µs ns µs µs ©2002, Micron Technology, Inc. ...
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... HIGH 100 t LOW 4 SCL 100 t SU:DAT 250 t SU:STA 4.7 t SU:STO 4.7 t WRC 10 Micron Technology, Inc., reserves the right to change products or specifications without notice. UNITS 3 0.5 V × 0 µA 10 µA 30 µ UNITS NOTES µs µ µs µs µs ns µ ...
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... RP 18ns (-335) 20ns (-26A/-265/-202) t RRD 12ns (-335) 15ns (-26A/-265/-202) t RCD 18ns (-335) 20ns (-26A/-265/-202) 23 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMMs MT16VDDT3264A MT16VDDT6464A ...
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... Release 0.0 -335 -26A -265 -202 MICRON (continued 256MB, 512MB (x64) 184-PIN DDR SDRAM DIMMs MT16VDDT3264A MT16VDDT6464A ...
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... MODULE SERIAL NUMBER 99-127 MANUFACTURER-SPECIFIC DATA (RSVD) NOTE: 1. “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW.” Variable Data. 32, 64 Meg x 64 DDR SDRAM DIMMs DD16C32_64X64AG_C.p65 – Rev. C; Pub. 3/02 184-PIN DDR SDRAM DIMMs ENTRY (VERSION) MT16VDDT3264A – 25 Micron Technology, Inc ...
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... S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micron.com, Internet: http://www.micron.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark and the Micron logo and M logo are trademarks of Micron Technology, Inc. 32, 64 Meg x 64 DDR SDRAM DIMMs DD16C32_64X64AG_C.p65 – Rev. C; Pub. 3/02 ...