MT16VDDT3264 Micron, MT16VDDT3264 Datasheet - Page 15

• Manufacturer Part Number: MT16VDDT3264
• Description: 184-Pin DDR SDRAM DIMMs (x64)
• Manufacturer: Micron

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS*
(Notes: 1–5, 12–15, 29; notes appear following parameter tables)
(0°C ≤ T
CAPACITANCE (All Modules)
(Note: 11; notes appear following parameter tables)
32, 64 Meg x 64 DDR SDRAM DIMMs
DD16C32_64X64AG_C.p65 – Rev. C; Pub. 3/02
* - Module AC timing parameters comply with PC 2700, PC2100, and PC1600 design specifications, based on DDR SDRAM component
PARAMETER
Data valid output window
REFRESH to REFRESH command interval (256MB)
REFRESH to REFRESH command interval (512MB)
Average periodic refresh interval (256MB)
Average periodic refresh interval (512MB)
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
AC CHARACTERISTICS
PARAMETER
Input/Output Capacitance: DQ, DQS
Input Capacitance: Command and Address
Input Capacitance: S0#, S1#
Input Capacitance: CK0, CK0#
Input Capacitance: CK1, CK1#, CK2, CK2#
Input Capacitance: CKE0, CKE1
performance parameters.
A
≤ +70°C; V
DD
Q = +2.5V ±0.2V, V
DD
DD
= +2.5V ±0.2V)
t
t
t
t
SYM
t
t
t
XSNR
XSRD
REFC
REFC
REFI
REFI
VTD
na
15
MIN
t
200
QH -
75
0
-335
t
DQSQ
140.6
MAX
70.3
15.6
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7.8
184-PIN DDR SDRAM DIMMs
MIN
t
200
QH -
75
-26A/-265
0
t
DQSQ
140.6
MAX
256MB, 512MB (x64)
70.3
15.6
7.8
SYMBOL MIN
C
C
C
C
C
C
I
I
IO
I
I
I
3
3
1
2
4
a
b
MIN
t
200
QH -
80
0
-202
t
DQSQ
32.0
16.0
12.0
16.0
8.0
8.0
MAX
140.6
70.3
15.6
7.8
MAX
©2002, Micron Technology, Inc.
10.0
48.0
24.0
12.0
18.0
24.0
UNITS
t
ns
µs
µs
µs
µs
ns
ns
CK
UNITS
NOTES
p F
pF
pF
pF
pF
pF
22
21
21
21
21