MT16VDDT3264 Micron, MT16VDDT3264 Datasheet - Page 21

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MT16VDDT3264

Manufacturer Part Number
MT16VDDT3264
Description
184-Pin DDR SDRAM DIMMs (x64)
Manufacturer
Micron
Datasheet
EEPROM DEVICE SELECT CODE
Note: The most significant bit (b7) is sent first.
EEPROM OPERATING MODES
NOTE: 1. X = V
SERIAL PRESENCE-DETECT EEPROM TIMING PARAMETERS
32, 64 Meg x 64 DDR SDRAM DIMMs
DD16C32_64X64AG_C.p65 – Rev. C; Pub. 3/02
Memory Area Select Code (two arrays)
Protection Register Select Code
MODE
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SYMBOL
t
t
t
t
t
t
AA
BUF
DH
HD:DAT
HD:STA
F
SDA OUT
SDA IN
SCL
IH
or V
IL
.
t SU:STA
RW BIT
1
0
1
1
0
0
MIN
300
0.3
4.7
0
4
t F
SPD EEPROM TIMING DIAGRAM
t HD:STA
WC
V
V
MAX
X
X
X
X
300
t LOW
3.5
t AA
IL
IL
1
BYTES
UNITS
≤ 16
≥ ≥ ≥ ≥ ≥ 1
µs
µs
ns
ns
µs
µs
1
1
1
1
t HIGH
t HD:DAT
b7
DEVICE TYPE IDENTIFIER
1
0
21
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
INITIAL SEQUENCE
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
b6
SYMBOL
t
t
t
t
t
t
0
1
t DH
HIGH
LOW
SU:DAT
SU:STA
SU:STO
R
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM DIMMs
b5
t SU:DAT
1
1
b4
0
0
256MB, 512MB (x64)
b3
E2
E2
CHIP ENABLE
MIN
b2
E1
E1
250
4.7
4.7
4.7
t SU:STO
4
t BUF
©2002, Micron Technology, Inc.
UNDEFINED
MAX
b1
E0
E0
1
UNITS
RW
RW
RW
b0
µs
µs
µs
ns
µs
µs

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