mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 68

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 32:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
WRITE-to-PRECHARGE – Uninterrupting
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
Notes:
Bank a ,
WRITE
Col b
T0
t
t
t
DQSS
DQSS
DQSS
1. PRE = PRECHARGE.
2. D
3. An unterrupted burst 4 of is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
5.
6. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE
t
and WRITE commands may be to different devices; in this case,
PRECHARGE command could be applied earlier.
WR is referenced from the first positive CK edge after the last data-in pair.
IN
D
b
b = data-in for column b.
IN
NOP
D
T1
b
IN
2
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+1
b+2
D
D
IN
IN
NOP
b+2
T2
D
IN
b+3
D
b+2
D
IN
IN
b+3
T2n
D
IN
b+3
D
68
IN
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
NOP
WR
T4
Don’t Care
(a or all)
T5
PRE
Bank
1
t
Mobile DDR SDRAM
Transitioning Data
WR is not required and the
©2007 Micron Technology, Inc. All rights reserved
T6
NOP
Operations