mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 16
mt46h32m16lf
Manufacturer Part Number
mt46h32m16lf
Description
512mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M16LF.pdf
(84 pages)
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Table 4:
PDF: 09005aef82d5d305/Source: 09005aef82d5d2e7
512mb_ddr_mobile_sdram_t47m_density__2.fm - Rev. D 05/08 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: command and address
Delta input capacitance: command and address
Input/output capacitance: DQs, DQS, DM
Delta input/output capacitance: DQs, DQS, DM
Capacitance (x16, x32)
Note 1 applies to all the parameters in this table.
Notes:
1. This parameter is sampled. V
2. The input capacitance per pin group will not differ by more than this maximum amount for
3. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum
V
ing the fact that they are matched in loading.
any given device.
amount for any given device.
OUT
(
DC
) = V
DD
Q/2, V
OUT
Symbol
CDCK
CDIO
CCK
(peak-to-peak) = 0.2V. DM input is grouped with I/O pins, reflect-
CDI
CIO
CI
16
DD
/V
DD
Q = 1.70–1.95V, f = 100 MHz, T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512Mb: x16, x32 Mobile DDR SDRAM
Min
2.0
2.0
2.0
–
–
–
Max
Electrical Specifications
4.0
0.5
4.0
1.0
4.5
1.0
©2004 Micron Technology, Inc. All rights reserved
A
= 25°C,
Unit
pF
pF
pF
pF
pF
pF
Notes
2
2
3