mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 42

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Burst Length (BL)
Burst Type
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Read and write accesses to the Mobile DDR SDRAM are burst oriented, with the burst
length (BL) being programmable. The burst length determines the maximum number of
column locations that can be accessed for a given READ or WRITE command. Burst
lengths of 2, 4, 8, or 16 locations are available for both sequential and interleaved burst
types.
When a READ or WRITE command is issued, a block of columns equal to the burst
length is effectively selected. All accesses for that burst take place within this block,
meaning that the burst will wrap when a boundary is reached. The block is uniquely
selected by A1–Ai when BL = 2, by A2–Ai when BL = 4, by A3–Ai when BL = 8, and by A4–
Ai when BL = 16, where Ai is the most significant column address bit for a given configu-
ration. The remaining (least significant) address bits are used to specify the starting loca-
tion within the block. The programmed burst length applies to both READ and WRITE
bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved
via the standard mode register.
The ordering of accesses within a burst is determined by the burst length, the burst type,
and the starting column address. See Table 19 on page 43 for details.
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
Mobile DDR SDRAM
©2007 Micron Technology, Inc. All rights reserved
Operations