mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 21

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Table 8:
PDF: 09005aef82d5d305/Source: 09005aef82d5d2e7
512mb_ddr_mobile_sdram_t47m_density__2.fm - Rev. D 05/08 EN
Parameter
DQS input high pulse width
DQS input low pulse width
DQS–DQ skew, DQS to last DQ valid,
per group, per access
WRITE command to first DQS
latching transition
DQS falling edge from CK rising –
hold time
DQS falling edge to CK rising – setup
time
Data valid output window
Half-clock period
Data-out High-Z
window from CK/CK#
Data-out Low-Z window from
CK/CK#
Address and control
input hold time
Address and control
input hold time
Address and control
input setup time
Address and control
input setup time
Address and control input
pulse width
LOAD MODE REGISTER command
cycle time
DQ–DQS hold, DQS to first DQ to go
non-valid, per access
Data hold skew factor
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE/ACTIVE-to-AUTO
REFRESH command period
ACTIVE-to-READ or WRITE delay
Refresh period
Average periodic refresh interval
AUTO-REFRESH command period
PRECHARGE command period
DQS read preamble
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b
command
Read of SRR to next valid command
Electrical Characteristics and Recommended AC Operating Conditions (continued)
Notes: 1–9 apply to all parameters in this table; V
slow slew
slow slew
fast slew
fast slew
CL = 3
CL = 2
CL = 3
CL = 2
rate
rate
rate
rate
Symbol
t
t
t
t
t
t
t
t
DQSH
DQSQ
DVW
t
t
t
t
t
DQSL
DQSS
t
t
t
MRD
t
t
RPRE
RPRE
t
t
RPST
t
t
QHS
DSH
t
t
IPW
RAS
t
RCD
REFI
RRD
DSS
t
t
t
REF
RFC
t
SRC
IH
IH
QH
HP
HZ
RC
IS
IS
RP
LZ
F
S
F
S
-
CL + 1
0.75
97.5
t
t
t
t
0.4
0.4
0.2
0.2
t
1.0
0.9
1.1
0.9
1.1
2.3
0.9
0.5
0.4
CH,
QHS
40
55
15
15
10
M
QH -
HP
CL
–
–
2
–
–
–
–
-5
t
DQSQ
70,000
Max
1.25
0.6
0.6
0.4
5.0
6.5
0.5
7.8
1.1
1.1
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
21
-
CL + 1
Min
0.75
t
59.4
16.2
97.5
16.2
10.8
t
t
t
0.4
0.4
0.2
0.2
CH,
t
1.0
1.0
1.2
1.0
1.2
2.4
0.9
0.5
0.4
DD
QHS
42
QH -
HP
CL
–
–
–
2
–
–
–
/V
-54
DDQ
t
DQSQ
70,000
Max
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.45
1.25
0.6
0.6
5.0
6.5
0.5
7.8
1.1
1.1
0.6
64
512Mb: x16, x32 Mobile DDR SDRAM
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
= 1.70–1.95V
-
CL + 1
Min
97.5
0.75
t
t
t
t
0.4
0.4
0.2
0.2
t
1.0
1.1
1.3
1.1
1.3
2.4
0.9
0.5
0.4
CH,
42
60
18
18
12
QH -
HP
QHS
CL
–
–
–
2
–
–
–
-6
t
DQSQ
70,000
Max
1.25
0.65
0.6
0.6
0.5
5.0
6.5
7.8
1.1
1.1
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Electrical Specifications
-
CL + 1
Min
0.75
t
67.5
22.5
97.5
22.5
t
t
t
0.4
0.4
0.2
0.2
CH,
t
1.0
1.3
1.5
1.3
1.5
2.6
0.9
0.5
0.4
QHS
45
15
QH -
HP
©2004 Micron Technology, Inc. All rights reserved
CL
–
–
–
2
–
–
–
-75
t
DQSQ
70,000
Max
1.25
0.75
0.6
0.6
0.6
6.0
6.5
7.8
1.1
1.1
0.6
64
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Unit
t
t
t
t
t
t
t
t
t
t
ms
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
ns
ns
ns
µs
ns
ns
CK
CK
CK
ns
CK
Notes
12, 16
18, 19
14, 20
14, 20
12, 16
16
17
18
15
22