mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 56

• Manufacturer Part Number: mt46h32m16lf
• Description: 512mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 19:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Command
Command
READ-to-PRECHARGE
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
Bank a,
Bank a,
READ
READ
Col n
1. D
2. BL = 4, or an interrupted burst of 8 or 16.
3. Shown with nominal
4. READ-to-PRECHARGE equals 2 clocks, which allows 2 data pairs of data-out.
5. A READ command with auto precharge enabled, provided
6. PRE = PRECHARGE command; ACT = ACTIVE command.
Col n
T0
T0
precharge to be performed at x number of clock cycles after the READ command, where x =
BL/2.
OUT
n = data-out from column n.
CL = 2
NOP
NOP
T1
T1
CL = 3
T1n
T1n
t
AC,
D
(a or all)
(a or all)
Bank a,
Bank a,
OUT
n
T2
PRE
T2
PRE
t
DQSCK, and
56
D
n + 1
T2n
T2n
OUT
D
OUT
n
D
n + 2
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t
T3
NOP
T3
NOP
OUT
DQSQ.
t RP
D
n + 1
t RP
Don’t Care
OUT
D
T3n
T3n
n + 3
OUT
D
n + 2
OUT
T4
T4
NOP
NOP
t
RAS (MIN) is met, would cause a
D
n + 3
OUT
Transitioning Data
Mobile DDR SDRAM
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Bank a,
Bank a,
T5
T5
ACT
Row
Row
ACT
Operations