mt46h32m16lf Micron Semiconductor Products, mt46h32m16lf Datasheet - Page 52
mt46h32m16lf
Manufacturer Part Number
mt46h32m16lf
Description
512mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H32M16LF.pdf
(84 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
mt46h32m16lfBF-5
Manufacturer:
MICRON
Quantity:
1 190
Company:
Part Number:
mt46h32m16lfBF-5 IT:B
Manufacturer:
CONEXANT
Quantity:
80
Company:
Part Number:
mt46h32m16lfBF-5 IT:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
mt46h32m16lfBF-5 IT:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
mt46h32m16lfBF-5 IT:C
Manufacturer:
AD
Quantity:
1 000
Company:
Part Number:
mt46h32m16lfBF-5 IT:C
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
mt46h32m16lfBF-5 IT:C
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
mt46h32m16lfBF-5:B
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
mt46h32m16lfBF-5:B TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
mt46h32m16lfBF-5IT
Manufacturer:
TI
Quantity:
500
Company:
Part Number:
mt46h32m16lfBF-5IT:C
Manufacturer:
MICRON
Quantity:
1 600
Part Number:
mt46h32m16lfBF-5IT:C
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
mt46h32m16lfBF-6 AT
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
mt46h32m16lfBF-6 AT:B
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Figure 15:
PDF: 09005aef82ce3074/Source: 09005aef82ce20c9
ddr_mobile_sdram_cmd_op_timing_dia_fr3.08__3.fm - Rev. D 05/08 EN
Command
Command
Address
Address
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Nonconsecutive READ Bursts
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4, 8, or 16 (if burst is 8 or 16, the second burst interrupts the first).
3. Shown with nominal
4. Example applies when READ commands are issued to different devices or nonconsecutive
READs.
OUT
CL = 2
n (or b) = data-out from column n (or column b).
NOP
NOP
T1
T1
CL = 3
T1n
T1n
D
OUT
n
NOP
NOP
T2
1
T2
t
AC,
t
D
n + 1
DQSCK, and
OUT
T2n
T2n
52
D
D
n + 2
READ
OUT
READ
Bank,
Bank,
Col b
OUT
Col b
n
T3
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
D
n + 1
D
n + 3
T3n
T3n
OUT
OUT
CL = 2
D
n + 2
T4
T4
NOP
NOP
OUT
Don’t Care
CL = 3
T4n
D
n + 3
T4n
OUT
T5
T5
Mobile DDR SDRAM
NOP
NOP
©2007 Micron Technology, Inc. All rights reserved
D
OUT
b
Transitioning Data
T5n
T5n
D
b + 1
OUT
Operations
T6
T6
NOP
NOP
D
D
b + 2
OUT
OUT
b