pxf4333 Infineon Technologies Corporation, pxf4333 Datasheet - Page 336

• Manufacturer Part Number: pxf4333
• Description: Abm 3g Atm Buf Fer Manager
• Manufacturer: Infineon Technologies Corporation

8
8.1
Table 8-1
Parameter
Ambient temperature under biasPXF
Storage temperature
IC supply voltage with respect to ground
Voltage on any pin with respect to ground
ESD robustness
HBM: 1.5 kΩ, 100 pF
1)
Note: Stresses above those listed here may cause permanent damage to the
8.2
Table 8-2
Parameter
Ambient temperature
under bias
Junction temperature
Supply voltage 3.3V
Supply voltage 1.8V
Ground
Power dissipation
Note: In the operating range, the functions given in the circuit description are fulfilled.
Data Sheet
According to MIL-Std 883D, method 3015.7 and ESD Association Standard EOS/ESD-5.1-1993.
The RF Pins 20, 21, 26, 29, 32, 33, 34 and 35 are not protected against voltage stress > 300 V (versus
GND). The high frequency performance prohibits the use of adequate protective structures.
device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Electrical Characteristics
Absolute Maximum Ratings
Operating Range
Absolute Maximum Ratings
Operating Range
1)
Symbol
T
T
V
V
V
P
A
J
DD33
DD18
SS
min.
-40
3.0
1.62
0
Limit Values
336
Symbol
T
T
V
V
V
A
stg
DD
S
ESD,HBM
max.
85
125
3.6
1.98
0
2.5
-40 to 85
-40 to 125
-0.3 to 3.6
-0.4 to
2000
Electrical Characteristics
Unit Test Condition
°C
°C
V
V
V
W
Limit Values
V
DD
+ 0.4
PXF 4333 V1.1
2001-12-17
ABM-3G
Unit
°C
°C
V
V
V
V
S
or