pxf4333 Infineon Technologies Corporation, pxf4333 Datasheet - Page 97
pxf4333
Manufacturer Part Number
pxf4333
Description
Abm 3g Atm Buf Fer Manager
Manufacturer
Infineon Technologies Corporation
Datasheet
1.PXF4333.pdf
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3.5.9.2
In VBR shaping mode, one connection entry requires one AVT Context RAM section with
a total of four double words. Since the AVT table is accessed from the external micro
controller via a 16-bit transfer register, the VBR connection context appears as a 16-bit
organized table with 8 entries as shown in
Table 3-38
0
1
2a
3a
2b
3b
4
5
6
7
Note: Entry 2/3 is used for 2 purposes:
Table 3-39
Parameter
Config(6:0)
tauS(15:0)
TP(15:0)
TS(15:0)
TET(23:0)
VDT(18:0)
Data Sheet
15
Config(6:0)
TET(15:0)
ST1(12:0)
ST0(9:0)
unused
VDT(15:0)
unused
tauS(15:0)
TS(15:0)
TP(15:0)
a) Internal Relog–Relog/Reschedule: two possible ST values for low and high
priority cells
b) Relog/Reschedule–Emit: VDT of next cell
14
AVT Context RAM Section for VBR Shaping Support
AVT Context Table: VBR Shaping (Table Layout)
AVT Context Table: VBR Shaping Parameter Description
13
TeV
Initial
Value
configure
configure
configure
configure
don’t care
don’t care
12
Temit(12:0)
11
Comment
See
Delay tolerance parameter tau for SCR
extension (15:10) and integer (9:0) part
Rate parameter for peak rate limiter
integer (15:6) and fractional (5:0) part
Rate parameter for SCR-Leaky Bucket
integer (15:6) and fractional (5:0) part
Theoretical Emit Time for SCR
Virtual departure time of cell
extension (18:16), integer (15:6) and fractional (5:0) part
10
Section 3.5.9.3
9
8
97
Table
7
TET(23:16)
3-38:
for mapping
6
5
STf(5:0)
4
Functional Description
3
PXF 4333 V1.1
2
ST0(12:10)
VDT(18:16)
2001-12-17
ABM-3G
1
0
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