km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 35

• Manufacturer Part Number: km4132g271b
• Description: 128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM4132G271B
CLOCK
Page Read Cycle at Different Bank @Burst Length=4
(CL=3)
ADDR
(CL=2)
DQM
CKE
RAS
CAS
DQ
DQ
WE
DSF
CS
A
A
9
8
*Note :
0
*Note 1
Row Active
(A-Bank)
RAa
RAa
1
1. CS can be don t care when RAS, CAS and WE are high at the clock high going edge.
2. To interrupt a burst read by row precharge, both the read and the precharge banks must be the same.
2
3
(A-Bank)
Read
CAa
4
Row Active
(B-Bank)
RBb
RBb
5
QAa0
6
QAa1
QAa0
7
(B-Bank)
QAa1
CBb
QAa2
Read
8
QAa3
QAa2
- 35
9
HIGH
LOW
QAa3
QBb0
10
QBb1 QBb2
QBb0
11
(A-Bank)
Read
QBb1 QBb2
CAc
12
QBb3
13
(B-Bank)
Read
QAc0
QBb3
CBd
14
QAc1
QAc0
15
(A-Bank)
Read
QAc1
CAe
QBd0
Rev. 2.4 (May 1998)
CMOS SGRAM
16
QBd1
QBd0
17
Precharge
(A-Bank)
QAe0
QBd1
18
*Note 2
: Don t care
QAe1
QAe0
19
QAe1