km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 8

• Manufacturer Part Number: km4132g271b
• Description: 128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM4132G271B
AC CHARACTERISTICS
AC OPERATING TEST CONDITIONS
Note :
CLK cycle time
CLK to valid
output delay
Output data hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
AC input levels
Input timing measurement reference level
Input rise and fall time(See note 3)
Output timing measurement reference level
Output load condition
Output
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf)=1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
(Fig. 1) DC Output Load Circuit
870
Parameter
Parameter
CAS Latency=3
CAS Latency=2
CAS Latency=3
CAS Latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
3.3V
1200
30pF
Symbol
V
V
t
t
t
OH
OL
t
SAC
t
t
t
t
t
SHZ
SLZ
OH
CC
CH
SS
SH
CL
(DC) = 0.4V, I
(DC) = 2.4V, I
(V
DD
= 3.3V 0.3V, T
Min
2.5
2.5
2.5
12
7
2
1
1
-
-
-
-
- 8 -
-7
OL
OH
1000
Max
= 2mA
= -2mA
6
8
6
8
A
= 0 to 70 C)
Min
2.5
2.5
12
8
3
3
1
1
-
-
-
-
Output
-8
* All AC parameters are measured from half to half.
1000
Max
6.5
6.5
8
8
V
ih
(Fig. 2) AC Output Load Circuit
t
/V
R
/
See Fig. 2
il
t
F
= 2.4V / 0.4V
Value
=1ns/ 1ns
Min
2.5
3.5
3.5
2.5
1.4V
1.4V
10
13
1
1
-
-
-
-
Z0=50
-10
Rev. 2.4 (May 1998)
CMOS SGRAM
1000
Max
7
9
7
9
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
50
30pF
tt
= 1.4V
Note
1, 2
1
2
3
3
3
3
2