km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 41

• Manufacturer Part Number: km4132g271b
• Description: 128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

CLOCK
KM4132G271B
Read Interrupted by Precharge Command & Read Burst Stop Cycle (@Full page Only)
(CL=2)
(CL=3)
ADDR
DQM
CKE
RAS
CAS
DSF
DQ
DQ
WE
CS
A
A
9
8
*Note :
0
Row Active
(A-Bank)
RAa
RAa
1
1. At full page mode, burst is wrap-around at the end of burst. So auto precharge is impossible.
2. About the valid DQ s after burst stop, it is same as the case of RAS interrupt.
3. Burst stop is valid at full page mode.
Both cases are illustrated above timing diagram. See the label 1, 2 on them.
But at burst write, Burst stop and RAS interrupt should be compared carefully.
Refer the timing diagram of "Full page write burst stop cycle".
2
3
(A-Bank)
*Note 1
Read
CAa
4
5
QAa0
6
QAa1
QAa0
7
QAa2
QAa1
*Note 2
8
Burst Stop
QAa3
QAa2
- 41
9
HIGH
QAa4
QAa3
10
1
(A-Bank)
*Note 1
Read
QAa4
CAb
11
2
12
QAb0
13
QAb1
QAb0
14
QAb2
QAb1
15
QAb3
QAb2
Rev. 2.4 (May 1998)
CMOS SGRAM
16
Precharge
(A-Bank)
QAb4
QAb3
17
QAb5
QAb4
18
1
: Don t care
QAb5
19
2