km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 7

• Manufacturer Part Number: km4132g271b
• Description: 128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM4132G271B
DC CHARACTERISTICS
Note : 1. Measured with outputs open. Addresses are changed only one time during tcc(min).
(Recommended operating condition unless otherwise noted, T
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
Operating Current
(One Bank Block Write)
2. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
Parameter
I
I
I
I
I
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC2
CC2
CC3
CC3
CC3
CC3
CC4
CC5
CC6
CC7
Symbol
P
PS
N
NS
P
PS
N
NS
Burst Length =1
t
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
I
All bank Activated, t
t
CKE
t
RC
OL
RC
CC
= 0 mA, Page Burst
t
t
t
RC
RC
CC
V
V
V
V
V
V
V
V
0.2V
(min), t
IL
IL
IH
IH
IL
IL
IH
IH
(min)
(min), I
(max), t
(max), CLK
(max), t
(max), CLK
(min), CS
(min), CLK
(min), CS
(min), CLK
Test Condition
OL
CC
CC
CC
=0mA, t
A
CCD
= 0 to 70 C V
= 15ns
= 15ns
- 7 -
t
CC
V
V
V
V
IH
IH
V
V
= t
(min), I
IL
IL
IL
(min), t
IL
(min), t
BWC
(max), t
(max), t
CCD
(max), t
(max), t
(min)
(min)
OL
CC
CC
IH(min)
CC
CC
CC
CC
= 0 mA
= 15ns
= 15ns
=
=
=
=
/V
Latency
IL(max)
CAS
3
2
=2.0V/0.8V)
180
300
180
210
90
-7
Speed
160
280
180
190
35
15
50
25
90
-8
2
2
3
3
2
Rev. 2.4 (May 1998)
CMOS SGRAM
150
210
160
150
-10
90
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2