k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 13

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
6.0 Absolute Maximum Ratings
6.1 Absolute Maximum DC Ratings
[ Table 4 ] Absolute Maximum DC Ratings
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
3. V
6.2 DRAM Component Operating Temperature Range
Note :
1. Operating Temperature T
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case tem-
3. Some applications require operation of the Extended Temperature Range between 85°C and 95°C case temperature. Full specifications are guaran-
7.0 AC & DC Operating Conditions
7.1 Recommended DC operating Conditions (SSTL_1.5)
[ Table 6 ] Recommended DC Operating Conditions
Note :
1. Under all conditions V
2. V
[ Table 5 ] Temperature Range
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh mode with
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us. It is also possible to specify a component
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
standard.
500mV; V
JEDEC document JESD51-2.
perature must be maintained between 0-85°C under all operating conditions
teed in this range, but the following additional conditions apply:
V
DDQ
DD
Symbol
Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7
= 0b)
IN,
with 1X refresh (tREFI to 7.8us) in the Extended Temperature Range.
Symbol
V
T
V
V
Symbol
DDQ
STG
and V
V
T
V
DD
DDQ
tracks with V
DD
OPER
OUT
REF
DDQ
may be equal to or less than 300mV.
must be within 300mV of each other at all times;and V
Supply Voltage
Supply Voltage for Output
DD
Voltage on V
Voltage on V
Voltage on any pin relative to Vss
. AC parameters are measured with V
DDQ
OPER
Storage Temperature
must be less than or equal to V
is the case surface temperature on the center/top side of the DRAM. For measurement conditions, please refer to the
Parameter
DDQ
DD
Parameter
pin relative to Vss
Operating Temperature Range
pin relative to Vss
Parameter
DD
DD
.
and V
Page 13 of 61
DDQ
REF
1.425
1.425
Min.
tied together.
must be not greater than 0.6 x V
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-55 to +100
Rating
Rating
Typ.
1.5
1.5
0 to 95
rating
DDQ
2Gb DDR3 SDRAM
1.575
1.575
Max.
Rev. 1.0 December 2008
, When V
Unit
°C
DD
Units
and V
V
V
Units
°C
V
V
V
DDQ
are less than
Notes
1, 2, 3
Notes
1,2
1,2
Notes
1, 2
1,3
1,3
1