k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 28

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
Figure 17. Definition of tAOFPD
Figure 18. Definition of tADC
CK
CK
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
DQ, DM
DQS , DQS
TDQS , TDQS
Begin point : Rising edge of CK - CK
with ODT being first registered low
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
V
V
RTT_Nom
RTT_Nom
End point
Extrapolated point
at V
V
SW2
RTT_Nom
V
SW1
t
End point Extrapolated point at V
t
End point Extrapolated point at V
AOFPD
ADC
T
T
SW2
SW21
T
SW1
T
SW11
V
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
SW1
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V
SW2
V
RTT_Wr
RTT_Nom
RTT_Nom
End point Extrapolated point at V
t
ADC
T
V
SW12
SSQ
V
T
SW22
TT
V
RTT_Nom
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
RTT_Wr
V
SSQ
V
TT