k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 42

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
13.2 Refresh Parameters by Device Density
[ Table 42 ] Refresh parameters by device density
Note :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices support the following options or
13.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin
[ Table 43 ] DDR3-800 Speed Bins
[ Table 44 ] DDR3-1066 Speed Bins
All Bank Refresh to active/refresh cmd time
Average periodic refresh interval
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6 / CWL = 5
Supported CL Settings
Supported CWL Settings
Intermal read command to first data
ACT to internal read or write delay time
PRE command period
ACT to ACT or REF command period
ACT to PRE command period
CL = 6
CL = 7
CL = 8
Supported CL Settings
Supported CWL Settings
DDR3 SDRAM Speed Bins include tCK, tRCD, tRP, tRAS and tRC for each corresponding bin.
requirements referred to in this material.
Parameter
Parameter
Parameter
CL-nRCD-nRP
CL-nRCD-nRP
Speed
Speed
CWL = 5
CWL = 6
CWL = 5
CWL = 6
CWL = 5
CWL = 6
tREFI
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Symbol
Symbol
tRCD
tRAS
tRCD
tRAS
tRP
tRC
tRC
tAA
85 °C < T
tAA
tRP
0 °C ≤ T
Symbol
tRFC
Page 42 of 61
CASE
CASE
≤ 85°C
≤ 95°C
13.125
13.125
13.125
50.625
1.875
1.875
52.5
37.5
37.5
min
min
2.5
2.5
15
15
15
1Gb
110
7.8
3.9
DDR3-1066
DDR3-800
Reserved
Reserved
Reserved
6 - 6 - 6
7 - 7 - 7
6,7,8
5,6
6
5
2Gb
160
7.8
3.9
9*tREFI
9*tREFI
max
max
<2.5
<2.5
3.3
3.3
20
20
-
-
-
-
-
-
4Gb
300
7.8
3.9
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
8Gb
350
7.8
3.9
Units
Units
nCK
nCK
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
µs
µs
ns
1,2,3,6
1,2,3,4
1,2,3,4
Note
1,2,3
Note
1,2,3
8
4
4
8
Note
1