k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 56
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k4b2g0846b
Manufacturer Part Number
k4b2g0846b
Description
2gb B-die Ddr3 Sdram Specification
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4B2G0846B.pdf
(61 pages)
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K4B2G04(08/16)46B
Note :Clock and Strobe are drawn on a different time scale.
Figure 24 - Illustration of tangent line for hold time tDH (for DQ with respect to strobe) and tIH
(for ADD/CMD with respect to clock)
Hold Slew Rate tangent line [ V
V
V
V
V
V
V
Rising Signal
IL
IL
REF
DDQ
IH
IH
(DC) max
(AC) max
(AC) min
(DC) min
(DC)
DQS
DQS
CK
CK
V
SS
=
dc to V
dc to V
region
region
REF
REF
Delta TR
tDS
tIS
tangent
REF
line
Page 56 of 61
(DC) - V
Hold Slew Rate
Falling Signal
tDH
tIH
Delta TR
IL
(DC)max ]
=
nominal
tangent line [ V
line
tDS
tIS
tangent
Delta TF
line
IH
tDH
tIH
(DC)min - V
Delta TF
nominal
2Gb DDR3 SDRAM
line
Rev. 1.0 December 2008
REF
(DC) ]