k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 21

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
9.6.1 Address and Control Overshoot and Undershoot specifications
9.6.2 Clock, Data, Strobe and Mask Overshoot and Undershoot specifications
9.6 Overshoot/Undershoot Specification
[ Table 20 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2, CS, RAS, CAS, WE, CKE, ODT)
[ Table 21 ] AC overshoot/undershoot specification for Clock, Data, Strobe and Mask (DQ, DQS, DQS, DM, CK, CK)
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 9)
Maximum peak amplitude allowed for undershoot area (See Figure 9)
Maximum overshoot area above V
Maximum undershoot area below V
Parameter
Maximum peak amplitude allowed for overshoot area (See Figure 11)
Maximum peak amplitude allowed for undershoot area (See Figure 11)
Maximum overshoot area above V
Maximum undershoot area below V
Volts
Volts
(V)
(V)
V
V
V
V
DD
SS
DDQ
SSQ
DD
DDQ
Figure 10. Clock, Data, Strobe and Mask Overshoot and Undershoot definition
SS
SSQ
(See Figure 9)
(See Figure 9)
(See Figure 11)
(See Figure 11)
Figure 9. Address and Control Overshoot and Undershoot definition
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
Maximum Amplitude
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Time (ns)
Time (ns)
DDR3-800
DDR3-800
0.25V-ns
0.25V-ns
0.67V-ns
0.67V-ns
0.4V
0.4V
0.4V
0.4V
DDR3-1066
DDR3-1066
0.19V-ns
0.19V-ns
0.5V-ns
0.5V-ns
0.4V
0.4V
0.4V
0.4V
Undershoot Area
Undershoot Area
Overshoot Area
Overshoot Area
Specification
Specification
DDR3-1333
DDR3-1333
0.15V-ns
0.15V-ns
0.4V-ns
0.4V-ns
2Gb DDR3 SDRAM
0.4V
0.4V
0.4V
0.4V
Rev. 1.0 December 2008
DDR3-1600
DDR3-1600
0.33V-ns
0.33V-ns
0.13V-ns
0.13V-ns
0.4V
0.4V
0.4V
0.4V
Unit
V-ns
V-ns
Unit
V-ns
V-ns
V
V
V
V