k4b2g0846b Samsung Semiconductor, Inc., k4b2g0846b Datasheet - Page 55

• Manufacturer Part Number: k4b2g0846b
• Description: 2gb B-die Ddr3 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4B2G04(08/16)46B
Figure 23. Illustration of tangent line for setup time tDS (for DQ with respect to strobe) and tIS
Note :Clock and Strobe are drawn on a different time scale.
(for ADD/CMD with respect to clock)
V
V
V
V
V
V
Setup Slew Rate
IL
IL
DDQ
REF
IH
IH
Falling Signal
(DC) max
(AC) max
(AC) min
(DC) min
DQS
DQS
(DC)
CK
CK
V
nominal
SS
line
V
region
REF
=
Delta TF
tangent line[V
to ac
Delta TF
tDS
tIS
tangent
REF
line
Page 55 of 61
(DC) - V
Setup Slew Rate
tDH
tIH
Rising Signal
IL
(AC)max]
nominal
line
Delta TR
=
tangent line[V
tDS
tIS
tVAC
tangent
line
Delta TR
IH
tDH
tIH
(AC)min - V
V
REF
region
to ac
2Gb DDR3 SDRAM
Rev. 1.0 December 2008
REF
(DC)]