CY8C36_10 CYPRESS [Cypress Semiconductor], CY8C36_10 Datasheet - Page 90

• Manufacturer Part Number: CY8C36_10
• Manufacturer: CYPRESS [Cypress Semiconductor]

Table 11-46. Flash AC Specifications (continued)
11.7.2 EEPROM
Table 11-47. EEPROM DC Specifications
Table 11-48. EEPROM AC Specifications
11.7.3 Nonvolatile Latches (NVL))
Table 11-49. NVL DC Specifications
Table 11-50. NVL AC Specifications
11.7.4 SRAM
Table 11-51. SRAM DC Specifications
Table 11-52. SRAM AC Specifications
Document Number: 001-53413 Rev. *I
T
T
T
V
F
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
Parameter
ERASE
BULK
WRITE
SRAM
SRAM
Erase and program voltage
Single row erase/write cycle time
EEPROM endurance
EEPROM data retention time
Erase and program voltage
NVL endurance
NVL data retention time
SRAM retention voltage
SRAM operating frequency
Row erase time
Row program time
Bulk erase time (16 KB to 64 KB)
Sector erase time (8 KB to 16 KB)
Total device program time
(including JTAG, and so on)
Flash endurance
Flash data retention time
Description
Description
Description
Description
Description
Description
Description
PRELIMINARY
Retention period measured from
last erase cycle (up to 100 K cycles)
V
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Programmed at 25 °C
Programmed at 0 °C to 70 °C
Retention period measured from
last erase cycle
DDD
pin
Conditions
Conditions
Conditions
Conditions
Conditions
Conditions
Conditions
PSoC
®
3: CY8C36 Family Datasheet
100k
Min
1.71
1.71
Min
Min
Min
Min
100
Min
Min
20
1M
1.2
DC
1K
20
20
20
–
–
–
–
–
–
Typ
Typ
Typ
Typ
Typ
Typ
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
2
–
–
Max
Max
Max
Max
Max
Max
Max
10
35
15
5.5
5.5
15
67
5
5
–
–
–
–
–
–
–
–
–
Page 90 of 112
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